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Leading-edge Semiconductor Technology Center

From Wikipedia, the free encyclopedia
Leading-edge Semoconductor Technology Center
FormationDecember 21, 2022; 23 months ago (2022-12-21)
HeadquartersChiyoda, Tokyo
Chairman
Tetsuro Higashi
Academic leader
Makoto Gonokami
Websitehttps://www.lstc.jp/index.html

The Leading-edge Semiconductor Technology Center is a semiconductor research institution based in Japan. It is funded by the Ministry of Economy, Trade and Industry and was established in December 2022.[1]

The organisation's primary goal as of 2024 is to establish a domestic semiconductor industry ecosystem by developing design, device, manufacturing, and equipment/material technologies for product realisation in collaboration with domestic and international institutions, using the 2 nm process node manufacturing technology and pilot line under development with short TAT (turnaround time).[2] In February 2024, it was announced that the organisation would receive an additional 45 billion yen research grant from the Ministry of Economy, Trade, and Industry.[3]

Member organisations[4]

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References

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  1. ^ "始動し始めた半導体産業復活への道 ~次世代半導体の開発戦略 – 経済産業新報社" (in Japanese). Retrieved 2024-06-05.
  2. ^ "技術研究組合最先端半導体技術センター". www.lstc.jp. Retrieved 2024-06-05.
  3. ^ "経産省、2nm以降の先端半導体開発に450億円 Rapidus後押し". EE Times Japan (in Japanese). Retrieved 2024-06-05.
  4. ^ "技術研究組合最先端半導体技術センター". www.lstc.jp. Retrieved 2024-06-05.
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