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File:N-V charge control PL maps.jpg

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Description Top: Schematic figure of an in-plane Al Schottky diode on H-terminated diamond surface. A confocal μPL measurement was performed at the edge of the Al contact (green spot) to investigate the bias-voltage dependent variation of NV emission in the depletion region. Bottom: A PL-intensity mapping performed on the diamond surface at the edge of the Al-Schottky-contact (rectangle area on the left with lower PL intensity). Compared to the zero-potential condition (a) there are bright spots visible at the edge of the Al-contact (b) upon applying a reverse bias potential of +20 V indicating NV− photoluminescence in the hole depletion region of the Schottky junction.
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Source http://www.nature.com/articles/srep12160
Author C. Schreyvogel, V. Polyakov, R. Wunderlich, J. Meijer & C. E. Nebel
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Date/TimeThumbnailDimensionsUserComment
current06:45, 15 March 2017Thumbnail for version as of 06:45, 15 March 20172,046 × 3,629 (1.84 MB)Materialscientist=={{int:filedesc}}== {{Information |description=Top: Schematic figure of an in-plane Al Schottky diode on H-terminated diamond surface. A confocal μPL measurement was performed at the edge of the Al contact (green spot) to investigate the bias-voltage...

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