File:Gate spacer formation by ANAB.png
Size of this preview: 800 × 196 pixels. Other resolutions: 320 × 78 pixels | 1,432 × 351 pixels.
Original file (1,432 × 351 pixels, file size: 824 KB, MIME type: image/png)
 | This is a file from the Wikimedia Commons. Information from its description page there is shown below. Commons is a freely licensed media file repository. You can help. |
Summary
| Description |
English: Sequence of ANAB etching of SiN cap layer on a patterned Si/SiO2 surface. From left: initial structure; structure after 5, 7 and 9 ANAB beam passes. |
| Date | |
| Source | Own work |
| Author | Dshashkov |
Licensing
I, the copyright holder of this work, hereby publish it under the following license:
This file is licensed under the Creative Commons Attribution-Share Alike 4.0 International license.
- You are free:
- to share – to copy, distribute and transmit the work
- to remix – to adapt the work
- Under the following conditions:
- attribution – You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- share alike – If you remix, transform, or build upon the material, you must distribute your contributions under the same or compatible license as the original.
File history
Click on a date/time to view the file as it appeared at that time.
| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 13:24, 24 October 2018 | | 1,432 × 351 (824 KB) | Dshashkov | Cross-wiki upload from wiki.riteme.site |
File usage
The following page uses this file:
